مقالات در نشریات
| # | عنوان مقاله | نویسندگان | نشریه | تاریخ انتشار |
|---|---|---|---|---|
| ۱ | Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs | K. Mehrabi-B. Ebrahimi-R. Yarmand-A. Afzali-Kusha-H. Mahmoodi | Elsevier Microelectronics Reliability | 2016 |
| ۲ | A Near-Threshold 7T SRAM Cell with High Write and Read Margins and Low Write Time for Sub-20 nm FinFET Technologies | M. Ansari-H. Afzali-Kusha-B. Ebrahimi-Z. Navabi-A. Afzali-Kusha-M. Pedram | Elsevier Integration, the VLSI Journal | 2015 |
| ۳ | A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications | B. Ebrahimi-M. Asad | Elsevier Superlattices and Microstructures | 2015 |
| ۴ | "Robust FinFET SRAM design based on dynamic back-gate voltage adjustment | B. Ebrahimi-A. Afzali-Kusha-H. Mahmoodi | Elsevier Microelectronics Reliability | 2014 |
| ۵ | A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages | B. Ebrahimi-R. Asadpour-A. Afzali-Kusha-M. Pedram | Wiley International Journal of Circuit Theory and Applications | 2015 |
| ۶ | An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities | B. Afzal-B. Ebrahimi-A. Afzali-Kusha-H. Mahmoodi | Elsevier Microelectronics Reliability | 2013 |
| ۷ | An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read SNM modeling | B. Afzal-B. Ebrahimi-A. Afzali-Kusha-M. Pedram | Springer Journal of Zhejiang University-SCIENCE C (Computers & Electronics) | 2012 |
| ۸ | A RESURF LDMOSFET with dummy gate on partial SOI | B. Ebrahimi-B. Afzal-A. Afzali-Kusha-S. Mohammadi | Springer Journal of the Korean Physical Society | 2012 |
| ۹ | G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems | H. Aghababa-B. Ebrahimi-M. Saremi-V. Moalemi-B. Forouzandeh | IEICE Electronics Express | 2012 |
| ۱۰ | Calculation of on-state I-V characteristics of LDMOSFETs based on an accurate LDD resistance modeling | B. Afzal-B. Ebrahimi-A. Afzali-Kusha-S. Mohammadi | Elsevier Superlattices and Microstructures | 2012 |
| ۱۱ | Probability calculation of read failures in nano-scaled SRAM cells under process variations | H. Aghababa-B. Ebrahimi-A. Afzali-Kusha- M. Pedram | Elsevier Microelectronics Reliability | 2012 |
| ۱۲ | Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability | B. Afzal-B. Ebrahimi-A. Afzali-Kusha-H. Mahmoodi | Elsevier Microelectronics Reliability | 2012 |
| ۱۳ | Statistical design optimization of FinFET SRAM using back-gate voltage | B. Ebrahimi-M. Rostami-A. Afzali-Kusha-M. Pedram | IEEE Trans. on VLSI Systems | 2011 |
| ۱۴ | A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement | M. Saremi-B. Ebrahimi-A. Afzali-Kusha-S. Mohammadi | Elsevier Microelectronics Reliability | 2011 |
نمایش ۱ تا ۱۴ مورد از کل ۱۴ مورد.