مقالات در نشریات

#عنوان مقالهنویسندگاننشریهتاریخ انتشار
 
۱Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMsK. Mehrabi-B. Ebrahimi-R. Yarmand-A. Afzali-Kusha-H. MahmoodiElsevier Microelectronics Reliability2016
۲A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applicationsB. Ebrahimi-M. AsadElsevier Superlattices and Microstructures2015
۳A Near-Threshold 7T SRAM Cell with High Write and Read Margins and Low Write Time for Sub-20 nm FinFET TechnologiesM. Ansari-H. Afzali-Kusha-B. Ebrahimi-Z. Navabi-A. Afzali-Kusha-M. PedramElsevier Integration, the VLSI Journal2015
۴&Robust FinFET SRAM design based on dynamic back-gate voltage adjustmentB. Ebrahimi-A. Afzali-Kusha-H. MahmoodiElsevier Microelectronics Reliability2014
۵A single-ended low leakage and low voltage 10T SRAM cell with high yield- N. Eslami- B. Ebrahimi-E. Shakouri-D. NajafiAnalog Integrated Circuits and Signal Processing2020-8-8
۶Low-power data encoding/decoding for energy-efficient static random access memory designG. Pasandi- K. Mehrabi-B. Ebrahimi-S. M. Fakhraei- M. Pedram-A. Afzali-KushaIET Circuits, Devices & Systems2019-8-7
۷A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technologyS. Sayyah- M. H. Moaiyeri- B. Ebrahimi- S. Hesabi- A. Afzali-KushaJournal of Computational Electronics2019-3-28
۸A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltagesB. Ebrahimi-R. Asadpour-A. Afzali-Kusha-M. PedramWiley International Journal of Circuit Theory and Applications2015
۹An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilitiesB. Afzal-B. Ebrahimi-A. Afzali-Kusha-H. MahmoodiElsevier Microelectronics Reliability2013
۱۰Modeling read SNM considering both soft oxide breakdown and negative bias temperature instabilityB. Afzal-B. Ebrahimi-A. Afzali-Kusha-H. MahmoodiElsevier Microelectronics Reliability2012
۱۱Probability calculation of read failures in nano-scaled SRAM cells under process variationsH. Aghababa-B. Ebrahimi-A. Afzali-Kusha- M. PedramElsevier Microelectronics Reliability2012
۱۲Calculation of on-state I-V characteristics of LDMOSFETs based on an accurate LDD resistance modelingB. Afzal-B. Ebrahimi-A. Afzali-Kusha-S. MohammadiElsevier Superlattices and Microstructures2012
۱۳G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systemsH. Aghababa-B. Ebrahimi-M. Saremi-V. Moalemi-B. ForouzandehIEICE Electronics Express2012
۱۴A RESURF LDMOSFET with dummy gate on partial SOIB. Ebrahimi-B. Afzal-A. Afzali-Kusha-S. MohammadiSpringer Journal of the Korean Physical Society2012
۱۵An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read SNM modelingB. Afzal-B. Ebrahimi-A. Afzali-Kusha-M. PedramSpringer Journal of Zhejiang University-SCIENCE C (Computers & Electronics)2012
۱۶Statistical design optimization of FinFET SRAM using back-gate voltageB. Ebrahimi-M. Rostami-A. Afzali-Kusha-M. PedramIEEE Trans. on VLSI Systems2011
۱۷A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvementM. Saremi-B. Ebrahimi-A. Afzali-Kusha-S. MohammadiElsevier Microelectronics Reliability2011
نمایش ۱ تا ۱۷ مورد از کل ۱۷ مورد.