مقالات در همایش ها
| # | عنوان مقاله | نویسندگان | همایش | تاریخ برگزاری همایش |
|---|---|---|---|---|
| ۱ | طراحی مداری ساختارهای تمام جمع کننده هیبریدی به منظور بهبود سالخوردگی | محمد وفایی پور-بهزاد ابراهیمی | اولین کنفرانس میکروالکترونیک ایران | 2019-12-25 |
| ۲ | بررسی و بهبود اثر بی ثباتی دمایی تحت بایاس بر تمام جمع کننده های هیبریدی | محمد وفایی پور-بهزاد ابراهیمی | اولین کنفرانس میکروالکترونیک ایران | 2019-12-25 |
| ۳ | مشخصات نویسندگان مقاله طراحی و مقایسه سلول های FinFET SRAM برای داشتن قابلیت نوشتن بالا | عرفان شکوری-بهزاد ابراهیمی-دنیز نجفی | اولین کنفرانس میکروالکترونیک ایران | 2019-12-25 |
| ۴ | Robust SRAM Cells Based on Asymmetric Nanoscale FinFET | R. Asadpour-B. Ebrahimi-A. Afzali-Kusha | the Nanotechnology Student Conference | 2013 |
| ۵ | FinFET SRAM Design using Dynamic Back-Gate Bias | B. Ebrahimi-A. Afzali-Kusha | the Nanotechnology Student Conference | 2013 |
| ۶ | double gate based SRAM design using back gate voltage | B. Ebrahimi-A. Afzali-Kusha | the Nanotechnology Student Conference | 2008 |
| ۷ | A compact physical model for subthreshold current in nanoscale FD/SOI MOSFETs | M.Moradinasab-B.Ebrahimi-M. Fathipour-B. Foroozandeh | International Conference on Electronic Materials | 2008 |
| ۸ | Deriving a compact model for current-voltage in carbon nanotube field effect transistors in their subthreshold regime | H. Hosseinzadegan-M. Moradinasab-B. Ebrahimi-A. Afzali-Kusha-E. Arzi | Proceedings of the Iran Physics Conference | 2007 |
| ۹ | A Robust And Low Power 7 transistors SRAM Cell Design | K. Mehrabi-B. Ebrahimi-A. Afzali-Kusha | the International Symposium on Computer Architecture & Digital Systems | 2015 |
| ۱۰ | High Performance and High Yield 5 nm Underlapped FinFET SRAM Design Using P type Access Transistors | R. Yarmand-B. Ebrahimi-H. Afzali-Kusha-A. Afzali-Kusha-M. Pedram | the International Symposium on Quality Electronic Design | 2015 |
| ۱۱ | Robust Polysilicon Gate FinFET SRAM Design using Dynamic Back-Gate Bias | B. Ebrahimi-A. Afzali-Kusha -N. Sehatbakhsh | the International conference on Design & Technology of Integrated Systems in nanoscale era | 2013 |
| ۱۲ | "Analysis of SRAM Cell Characteristics Based on High-k Metal-Gate Strained Si/Si1-xGex MOSFET with Consideration of NBTI/PBTI | B. Ebrahimi-A. Afzali-Kusha | the International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design | 2012 |
| ۱۳ | Low Power and Robust 8T/10T Subthreshold SRAM Cells | B. Ebrahimi-H. Afzali-Kusha-A. Afzali-Kusha | International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design | 2012 |
| ۱۴ | Low-Power and Robust SRAM Cells Based on Asymmetric FinFET Structures | B. Ebrahimi-R. Asadpour-A. Afzali-Kusha | the Asia Symposium on Quality Electronic Design | 2012 |
| ۱۵ | Ground Plane SOI MOSFET based SRAM With consideration of process variation | M. Saremi-B. Ebrahimi-A. Afzali-Kusha | the IEEE International Conference on Electron Devices and Solid-State Circuits | 2010 |
| ۱۶ | Analytical modeling of read stability metric of SRAM cell in nanoscale era | B. Ebrahimi-H. Aghababa-A. Afzali-Kusha | IEEE International Conference on Electron Devices and Solid-State Circuits | 2010 |
| ۱۷ | Process variation study of ground plane SOI MOSFET | M. Saremi, B. Ebrahimi-A. Afzali-Kusha- M. Saremi | the Asia Symposium on Quality Electronic Design | 2010 |
| ۱۸ | Realistic CNFET based SRAM cell design for better write stability | B. Ebrahimi-A. Afzali-Kusha | the Asia Symposium on Quality Electronic Design | 2009 |
| ۱۹ | A high speed subthreshold SRAM cell design | A. Ahmadimehr-B. Ebrahimi-A. Afzali-Kusha | the Asia Symposium on Quality Electronic Design | 2009 |
| ۲۰ | NBTI tolerant 4T double-gate SRAM design | B. Ebrahimi-A. Afzali-Kusha | Int'l Conference on Ultimate Integration of Silicon | 2009 |
نمایش ۱ تا ۲۰ مورد از کل ۲۵ مورد.