مقالات در همایش ها

#عنوان مقالهنویسندگانهمایشتاریخ برگزاری همایش
 
۱Robust SRAM Cells Based on Asymmetric Nanoscale FinFETR. Asadpour-B. Ebrahimi-A. Afzali-Kushathe Nanotechnology Student Conference2013
۲FinFET SRAM Design using Dynamic Back-Gate BiasB. Ebrahimi-A. Afzali-Kushathe Nanotechnology Student Conference2013
۳double gate based SRAM design using back gate voltageB. Ebrahimi-A. Afzali-Kushathe Nanotechnology Student Conference2008
۴A compact physical model for subthreshold current in nanoscale FD/SOI MOSFETsM.Moradinasab-B.Ebrahimi-M. Fathipour-B. ForoozandehInternational Conference on Electronic Materials2008
۵Deriving a compact model for current-voltage in carbon nanotube field effect transistors in their subthreshold regimeH. Hosseinzadegan-M. Moradinasab-B. Ebrahimi-A. Afzali-Kusha-E. ArziProceedings of the Iran Physics Conference2007
۶High Performance and High Yield 5 nm Underlapped FinFET SRAM Design Using P type Access TransistorsR. Yarmand-B. Ebrahimi-H. Afzali-Kusha-A. Afzali-Kusha-M. Pedramthe International Symposium on Quality Electronic Design2015
۷A Robust And Low Power 7 transistors SRAM Cell DesignK. Mehrabi-B. Ebrahimi-A. Afzali-Kushathe International Symposium on Computer Architecture & Digital Systems2015
۸Robust Polysilicon Gate FinFET SRAM Design using Dynamic Back-Gate BiasB. Ebrahimi-A. Afzali-Kusha -N. Sehatbakhshthe International conference on Design & Technology of Integrated Systems in nanoscale era2013
۹Low-Power and Robust SRAM Cells Based on Asymmetric FinFET StructuresB. Ebrahimi-R. Asadpour-A. Afzali-Kushathe Asia Symposium on Quality Electronic Design2012
۱۰Low Power and Robust 8T/10T Subthreshold SRAM CellsB. Ebrahimi-H. Afzali-Kusha-A. Afzali-KushaInternational Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design2012
۱۱"Analysis of SRAM Cell Characteristics Based on High-k Metal-Gate Strained Si/Si1-xGex MOSFET with Consideration of NBTI/PBTIB. Ebrahimi-A. Afzali-Kushathe International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design2012
۱۲Process variation study of ground plane SOI MOSFETM. Saremi, B. Ebrahimi-A. Afzali-Kusha- M. Saremithe Asia Symposium on Quality Electronic Design2010
۱۳Analytical modeling of read stability metric of SRAM cell in nanoscale eraB. Ebrahimi-H. Aghababa-A. Afzali-KushaIEEE International Conference on Electron Devices and Solid-State Circuits2010
۱۴Ground Plane SOI MOSFET based SRAM With consideration of process variationM. Saremi-B. Ebrahimi-A. Afzali-Kushathe IEEE International Conference on Electron Devices and Solid-State Circuits2010
۱۵A compact physical model for subthreshold current in nanoscale FD/SOI MOSFETsM.Moradinasab-B. Ebrahimi-M. Fathipourthe Int'l Conference on Ultimate Integration of Silicon2009
۱۶Vth-control method in double gate field effect transistor domino,S. Zeinolabedinzadeh-B. Ebrahimi-A. Afzali-Kushathe Int'l Conference on Ultimate Integration of Silicon2009
۱۷NBTI tolerant 4T double-gate SRAM designB. Ebrahimi-A. Afzali-KushaInt'l Conference on Ultimate Integration of Silicon2009
۱۸A high speed subthreshold SRAM cell designA. Ahmadimehr-B. Ebrahimi-A. Afzali-Kushathe Asia Symposium on Quality Electronic Design2009
۱۹Realistic CNFET based SRAM cell design for better write stabilityB. Ebrahimi-A. Afzali-Kushathe Asia Symposium on Quality Electronic Design2009
۲۰Design centering scheme for robust SRAM cell designM. Rostami-B. Ebrahimi-A. Afzali-Kushathe International Conference on Computer and Communication Engineering2008
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